Datasheet
www.fairchildsemi.com
2
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C2
FDMC7678 N-Channel Power Trench
®
MOSFET
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 21 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.2 1.5 3.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -5 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 17.5 A 4.2 5.3
mΩ
V
GS
= 4.5 V, I
D
= 15.0 A 5.1 6.8
V
GS
= 10 V, I
D
= 17.5 A
T
J
= 125 °C
5.7 7.2
g
FS
Forward Transconductance V
DD
= 5 V, I
D
= 17.5 A 90 S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V
f = 1MHz
1810 2410 pF
C
oss
Output Capacitance 620 820 pF
C
rss
Reverse Transfer Capacitance 75 110 pF
R
g
Gate Resistance 0.7 2.5 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 17.5 A
V
GS
= 10 V, R
GEN
= 6 Ω
10 19 ns
t
r
Rise Time 410ns
t
d(off)
Turn-Off Delay Time 26 41 ns
t
f
Fall Time 310ns
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V
I
D
= 17.5 A
28 39 nC
Total Gate Charge V
GS
= 0 V to 4.5 V 14 19 nC
Q
gs
Gate to Source Charge 4.4 nC
Q
gd
Gate to Drain “Miller” Charge 3.9 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.9 A (Note 2) 0.7 1.2
V
V
GS
= 0 V, I
S
= 17.5 A (Note 2) 0.8 1.2
t
rr
Reverse Recovery Time
I
F
= 17.5 A, di/dt = 100 A/μs
30 49 ns
Q
rr
Reverse Recovery Charge 13 23 nC
NOTES:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative V
GS
rating is for low duty cycle pulse occurence only. No continuous rating is implied.
4. E
AS
of 54 mJ is based on starting T
J
= 25
o
C, L = 0.3 mH, I
AS
= 19 A, V
DD
= 27 V, V
GS
= 10 V.
a. 53 °C/W when mounted on
a 1 i n
2
p a d o f 2 o z c o p p e r
b.125 °C/W when mounted on
a minimum pad of 2 oz copper