Datasheet

FDMC7672 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
2
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 13 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V 1
μA
T
J
= 125 °C 250
I
GSS
Gate to Source Leakage Current V
GS
= 20 V, V
DS
= 0 V 100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.2 1.9 3.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -6 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 16.9 A 4.3 5.7
mΩ
V
GS
= 4.5 V, I
D
= 15.0 A 5.4 7.0
V
GS
= 10 V, I
D
= 16.9 A
T
J
= 125 °C
5.5 6.9
g
FS
Forward Transconductance V
DD
= 5 V, I
D
= 16.9 A 82 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
2925 3890 pF
C
oss
Output Capacitance 1050 1400 pF
C
rss
Reverse Transfer Capacitance 80 120 pF
R
g
Gate Resistance 0.9 2.7 Ω
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 16.9 A,
V
GS
= 10 V, R
GEN
= 6 Ω
13 24 ns
t
r
Rise Time 6 12 ns
t
d(off)
Turn-Off Delay Time 31 49 ns
t
f
Fall Time 5 10 ns
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V
I
D
= 16.9 A
40 57 nC
Total Gate Charge V
GS
= 0 V to 4.5 V 18 24 nC
Q
gs
Total Gate Charge 9 nC
Q
gd
Gate to Drain “Miller” Charge 4 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 16.9 A (Note 2) 0.83 1.2
V
V
GS
= 0 V, I
S
= 1.9 A (Note 2) 0.72 1.2
t
rr
Reverse Recovery Time
I
F
= 16.9 A, di/dt = 100 A/μs
39 62 ns
Q
rr
Reverse Recovery Charge 18 32 nC
NOTES:
1: R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. E
AS
of 144 mJ is based on starting T
J
= 25
o
C, L = 1 mH, I
AS
= 17 A, V
DD
= 27 V, V
GS
= 10 V.
a. 53 °C/W when mounted on
a 1 in
2
pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper