Datasheet

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©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
FDMC7664 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 12 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V 1
μA
T
J
= 125 °C 250
I
GSS
Gate to Source Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.0 1.9 3.0 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -7 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 18.8 A 3.6 4.2
mΩ
V
GS
= 4.5 V, I
D
= 16.1 A 4.5 5.5
V
GS
= 10 V, I
D
= 18.8 A
T
J
= 125 °C
4.4 5.4
g
FS
Forward Transconductance V
DD
= 5 V, I
D
= 18.8 A 115 S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
3655 4865 pF
C
oss
Output Capacitance 1100 1465 pF
C
rss
Reverse Transfer Capacitance 115 170 pF
R
g
Gate Resistance 0.8 2.2 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 18.8 A
V
GS
= 10 V, R
GEN
= 6 Ω
15 27 ns
t
r
Rise Time 714ns
t
d(off)
Turn-Off Delay Time 37 59 ns
t
f
Fall Time 612ns
Q
g(TOT)
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V
I
D
= 18.8 A
55 76 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V 25 34 nC
Q
gs
Gate to Source Charge 12 nC
Q
gd
Gate to Drain “Miller” Charge 6 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 18.8 A (Note 2) 0.83 1.2
V
V
GS
= 0 V, I
S
= 1.9 A (Note 2) 0.71 1.2
t
rr
Reverse Recovery Time
I
F
= 18.8 A, di/dt = 100 A/μs
41 65 ns
Q
rr
Reverse Recovery Charge 20 35 nC
NOTES:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. E
AS
of 188 mJ is based on starting T
J
= 25
o
C, L = 1 mH, I
AS
= 19.4 A, V
DD
= 27 V, V
GS
= 10 V.
a. 53 °C/W when mounted on
a 1 in
2
pa d o f 2 oz co ppe r
b.125 °C/W when mounted on
a minimum pad of 2 oz copper