Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3
FDMC7660DC N-Channel Dual Cool
TM
PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V30 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 15 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V1μA
I
GSS
Gate to Source Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 1.2 2 2.5 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -7 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 22 A 1.62.2
mΩV
GS
= 4.5 V, I
D
= 18 A2.53.3
V
GS
= 10 V, I
D
= 22 A, T
J
= 125°C 2.2 3.3
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 22 A 147 S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1MHz
3885 5170 pF
C
oss
Output Capacitance 1215 1620 pF
C
rss
Reverse Transfer Capacitance 100 150 pF
R
g
Gate Resistance 0.7 1.5 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 22 A,
V
GS
= 10 V, R
GEN
= 6 Ω
17 31 ns
t
r
Rise Time 6.6 13 ns
t
d(off)
Turn-Off Delay Time 36 58 ns
t
f
Fall Time 510ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V,
I
D
= 22 A
54 76 nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V2434nC
Q
gs
Gate to Source Charge 13 nC
Q
gd
Gate to Drain “Miller” Charge 5.5 nC
V
SD
Source-Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 22 A (Note 2) 0.8 1.2
V
V
GS
= 0 V, I
S
= 1.9 A (Note 2) 0.7 1.2
t
rr
Reverse Recovery Time
I
F
= 22 A, di/dt = 100 A/μs
43 69 ns
Q
rr
Reverse Recovery Charge 24 38 nC