Datasheet

April 2001
2001 Fairchild Semiconductor Corporation
FDG6331L Rev B(W)
FDG6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 0.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6 package.
Applications
• Power management
• Load switch
Features
• –0.8 A, –8 V. R
DS(ON)
= 260 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 330 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 450 mΩ @ V
GS
= –1.8 V
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low R
DS(ON)
• Compact industry standard SC70-6 surface mount
package
Pin 1
SC70-6
3
2
1
4
5
6
Q1
Q2
Vout,C1
Vout,C1
R2
Vin,R1
ON/OFF
R1,C1
See Application Circuit
Equivalent Circuit
V
DROP
+–
IN OU
T
ON/OFF
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
IN
Gate-Source Voltage (Q2)
± 8
V
V
ON/OFF
Gate-Source Voltage (Q1) –0.5 to 8 V
I
Load
Load Current – Continuous (Note 2) –0.8 A
– Pulsed (Note 2) –2.4
P
D
Maximum Power Dissipation
(Note 1) 0.3
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 415
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.31 FDG6331L 7’’ 8mm 3000 units
FDG6331L