Datasheet

FDD8445 N-Channel PowerTrench
®
MOSFET
FDD8445 Rev A1 (W) www.fairchildsemi.com2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250μA, V
GS
= 0V 40 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32V
V
GS
= 0V
- - 1 μA
T
J
=150°C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
DS
= V
GS
, I
D
= 250μA 2 2.8 4 V
R
DS(ON)
Drain to Source On Resistance
I
D
= 50A, V
GS
= 10V - 6.7 8.7
mΩ
I
D
= 50A, V
GS
= 10V,
T
J
= 175°C
- 12.5 16.3
Dynamic Characteristics
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 3040 4050 pF
C
OSS
Output Capacitance - 295 390 pF
C
RSS
Reverse Transfer Capacitance - 178 270 pF
R
G
Gate Resistance f = 1MHz - 1.7 - Ω
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0 to 10V
V
DD
= 20V,
I
D
= 50 A
- 45 59 nC
Q
g(5)
Total Gate Charge at 5V V
GS
= 0 to 5V - 17 22 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0 to 2V - 5.8 7.6 nC
Q
gs
Gate to Source Gate Charge - 12.5 - nC
Q
gs2
Gate Charge Threshold to Plateau - 9.5 - nC
Q
gd
Gate to Drain “Miller” Charge - 10.5 - nC
Absolute Maximum Ratings T
c
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current Continuous (V
GS
=10v) (Note 1) 70 A
Continuous (V
GS
=10v,with R
θJA
= 52
o
C/W) 15.2 A
Pulsed Figure 4
E
AS
S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 2 ) 1 4 4 m J
P
D
Power Dissipation 79 W
Derate above 25
o
C0.53W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to +175
o
C
R
θJC
Thermal Resistance, Junction to Case 1.9
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient TO-252, lin
2
copper pad area 52
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8445 FDD8445 TO-252AA 13” 12mm 2500 units