Datasheet

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4
©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
FDD6796A / FDU679A_F071 N-Channel PowerTrench
®
MOSFET
Figure 7.
0 5 10 15 20 25 30
0
2
4
6
8
10
I
D
= 20 A
V
DD
= 13 V
V
DD
= 10 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 16 V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
5000
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100
1
10
100
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
40
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150 175
0
20
40
60
80
V
GS
= 4.5 V
Limited by Package
R
θ JC
= 3.6
o
C/W
V
GS
= 10 V
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C )
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 11. Forwar d Bias Safe
Operating Area
0.1 1 10 100
0.1
1
10
100
10 us
DC
100 ms
10 ms
1 ms
100 us
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
200
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ JC
= 3.6
o
C/W
T
C
= 25
o
C
Figure 12.
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
100
1000
2000
SINGLE PULSE
R
θ JC
= 3.6
o
C/W
T
C
= 25
o
C
V
GS
= 10 V
P
(
PK
)
,
PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics T
J
= 25 °C unless otherwise noted