Datasheet

FDD6780A / FDU6780A_F071 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
5
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
Figure 7.
0369121518
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 16.4 A
V
DD
= 13 V
V
DD
= 10 V
V
DD
= 16 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
100
1000
3000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100
1
10
30
100
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
Unclamped Inductive
Switching Capability
Figure 10.
25 50 75 100 125 150 175
0
15
30
45
60
Limited by Package
R
θJC
= 4.6
o
C/W
V
GS
= 4.5 V
V
GS
= 10 V
I
D
,
DRAIN CURRENT (A)
T
c
, CASE TEMPERATURE (
o
C )
Max imum C on tinu ous Dr ain
Current vs Case Temperature
Figure 11. Forward Bias Safe
Operating Area
0.1 1 10 70
0.1
1
10
100
200
10 us
DC
100 ms
10 ms
1 ms
100 us
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ JC
= 4.6
o
C/W
T
C
= 25
o
C
Fig ure 1 2. Sing le Puls e Max im um
Power Dissipation
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
100
1000
2000
SINGLE PULSE
R
θ JC
= 4.6
o
C/W
T
C
= 25
o
C
V
GS
= 10 V
P
(
PK
)
,
PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
J
= 25 °C unless otherwise noted