Datasheet

FDD6780A / FDU6780A_F071 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
2
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 µA, V
GS
= 0 V 25 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, referenced to 25 °C 14 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 20 V, V
GS
= 0 V 1 µA
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 µA 1.0 1.9 3.0 V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, referenced to 25 °C -5 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 16.4 A 6.8 8.6
mΩ
V
GS
= 10 V, I
D
= 16.4 A
Short-Lead I-PAK version
7.0 8.8
V
GS
= 4.5 V, I
D
= 12.2 A 14.1 19.0
V
GS
= 4.5 V, I
D
= 12.2 A
Short-Lead I-PAK version
14.3 19.2
V
GS
= 10 V, I
D
= 16.4 A, T
J
= 150 °C 10.3 13.0
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 16.4 A 70 S
C
iss
Input Capacitance
V
DS
= 13 V, V
GS
= 0 V,
f = 1MHz
927 1235 pF
C
oss
Output Capacitance 197 265 pF
C
rss
Reverse Transfer Capacitance 181 275 pF
R
g
Gate Resistance f = 1MHz 1.2 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 13 V, I
D
= 16.4 A,
V
GS
= 10 V, R
GEN
= 6 Ω
714ns
t
r
Rise Time 310ns
t
d(off)
Turn-Off Delay Time 16 29 ns
t
f
Fall Time 310ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 13 V,
I
D
= 16.4 A
17 24 nC
Q
g
Total Gate Charge V
GS
= 0 V to 5 V 9.2 13 nC
Q
gs
Gate to Source Charge 2.8 nC
Q
gd
Gate to Drain “Miller” Charge 4.0 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.1 A (Note 2) 0.8 1.2
V
V
GS
= 0 V, I
S
= 16.4 A (Note 2) 0.9 1.3
t
rr
Reverse Recovery Time
I
F
= 16.4 A, di/dt = 100 A/µs
15 27 ns
Q
rr
Reverse Recovery Charge 4 10 nC