Datasheet

FDD6760A N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
3
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
Typical Characteristics T
J
= 25 °C unless otherwise noted
Figure 1.
0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
V
GS
= 6 V
V
GS
= 4.5 V
V
GS
= 10 V
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5 V
V
GS
= 4 V
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 50 100 150 200
0
1
2
3
4
V
GS
= 6 V
V
GS
= 4.5 V
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
V
GS
= 4 V
V
GS
= 3.5 V
N o rmali z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N or m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150 175
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 27 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C )
vs Junction Temperature
Figure 4.
246810
0
2
4
6
8
10
12
14
I
D
= 27 A
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(
m
Ω
)
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics
0123456
0
50
100
150
200
V
DS
= 3.5 V
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
200
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current