Datasheet

August 2001
2007 Fairchild Semiconductor Corporation FDC6331L Rev D
FDC6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOT
TM
-6
package.
Applications
x Load switch
x Power management
Features
x –2.8 A, –8 V. R
DS(ON)
= 55 m: @ V
GS
= –4.5 V
R
DS(ON)
= 70 m: @ V
GS
= –2.5 V
R
DS(ON)
= 100 m:@ V
GS
= –1.8 V
x Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
x High performance trench technology for extremely
low R
DS(ON)
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
Pin 1
SuperSOT™-6
3
2
1
4
5
6
Q1
Q2
Vout,C1
Vout,C1
R2
Vin,R1
ON/O FF
R1,C1
See Application Circuit
Equivalent Circuit
V
DR O P
+–
IN OUT
ON/OFF
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
IN
Maximum Input Voltage r 8V
V
ON/OFF
High level ON/OFF voltage range –0.5 to 8 V
I
Load
Load Current – Continuous (Note 1) 2.8 A
– Pulsed 9
P
D
Maximum Power Dissipation (Note 1) 0.7 W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 qC
Thermal Characteristics
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1) 180
qC/W
R
TJC
Thermal Resistance, Junction-to-Case (Note 1) 60
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.331 FDC6331L 7’’ 8mm 3000 units
FDC6331L
tm
April 2007