Datasheet

FDB8445 N-Channel PowerTrench
®
MOSFET
FDB8445 Rev A1 (W)
www.fairchildsemi.com6
Figure 11.
-80 -40 0 40 80 120 160 200
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS
= V
DS
I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE(
o
C)
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
1.15
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 13.
0.1 1 10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
50
Capacitance vs Drain to Source
Voltage
Figure 14.
01020304050
0
1
2
3
4
5
6
7
8
9
10
V
DD
= 25V
V
DD
= 15V
V
DD
= 20V
I
D
= 70A
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE (nC)
Gate Charge vs Gate to Source Voltage
Typical Characteristics