Datasheet

FDB8445 N-Channel PowerTrench
®
MOSFET
FDB8445 Rev A1 (W)
www.fairchildsemi.com3
Electrical Characteristics T
J
= 25°C unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
t
(on)
Turn-On Time
V
DD
= 20V, I
D
= 70A
V
GS
= 10V, R
GS
= 5Ω
--45ns
t
d(on)
Turn-On Delay Time - 10 - ns
t
r
Turn-On Rise Time - 19 - ns
t
d(off)
Turn-Off Delay Time - 36 - ns
t
f
Turn-Off Fall Time - 16 - ns
t
off
Turn-Off Time - - 81 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 70A - - 1.25 V
I
SD
= 35A - - 1.0 V
t
rr
Reverse Recovery Time I
F
= 70A, di/dt = 100A/µs - - 59 ns
Q
rr
Reverse Recovery Charge I
F
= 70A, di/dt = 100A/µs - - 77 nC
Notes:
1: Maximum wire current carrying capacity is 70A.
2: Starting T
J
= 25
o
C, L = 65µH, I
AS
= 56A.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.