Datasheet

©2002 Fairchild Semiconductor Corporation FDB3682 / FDP3682 Rev. B
FDB3682 / FDP3682
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80 -40 0 40 80 120 160 200
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
0.9
1.0
1.1
1.2
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
I
D
= 250µA
BREAKDOWN VOLTAGE
100
1000
0.1 1 10 100
2000
20
C, CAPACITANCE (pF)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
≅ C
DS
+ C
GD
C
RSS
= C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0 5 10 15 20
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 32A
I
D
= 16A
WAVEFORMS IN
DESCENDING ORDER: