Datasheet

©2002 Fairchild Semiconductor Corporation FDB3682 / FDP3682 Rev. B
FDB3682 / FDP3682
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25°C, L = 0.27mH, I
AS
= 20A.
2: Pulse Width = 100s
Device Marking Device Package Reel Size Tape Width Quantity
FDB3682 FDB3682 TO-263AB 330mm 24mm 800 units
FDP3682 FDP3682 TO-220AB Tube N/A 50 units
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 100 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80V - - 1
µA
V
GS
= 0V T
C
= 150
o
C- - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA2-4V
r
DS(ON)
Drain to Source On Resistance
I
D
=32A, V
GS
=10V - 0.032 0.036
ΩI
D
= 16A, V
GS
= 6V, - 0.040 0.060
I
D
=32A, V
GS
=10V, T
C
=175
o
C - 0.080 0.090
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-1250- pF
C
OSS
Output Capacitance - 190 - pF
C
RSS
Reverse Transfer Capacitance - 45 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 50V
I
D
= 32A
I
g
= 1.0mA
-18.528nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 2V - 2.4 3.6 nC
Q
gs
Gate to Source Gate Charge - 6.5 - nC
Q
gs2
Gate Charge Threshold to Plateau - 4.1 - nC
Q
gd
Gate to Drain “Miller” Charge - 4.6 - nC
t
ON
Turn-On Time
V
DD
= 50V, I
D
= 32A
V
GS
= 10V, R
GS
= 16Ω
--83ns
t
d(ON)
Turn-On Delay Time - 9 - ns
t
r
Rise Time - 46 - ns
t
d(OFF)
Turn-Off Delay Time - 26 - ns
t
f
Fall Time - 32 - ns
t
OFF
Turn-Off Time - - 87 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 32A - - 1.25 V
I
SD
= 16A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 32A, dI
SD
/dt = 100A/µs- - 55 ns
Q
RR
Reverse Recovery Charge I
SD
= 32A, dI
SD
/dt = 100A/µs- - 90 nC