Datasheet

©2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
www.fairchildsemi.com
4
FDP3652 / FDB3652 — N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
C
= 25°C unless otherwise noted
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
0.1
1
10
100
1000
110100
200
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10µs
10ms
1ms
DC
100µs
1
10
100
0.1 1 10
0.01
500
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ¼ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
25
50
75
100
125
34556
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
25
50
75
100
125
00110
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7VV
GS
= 10V
12
14
16
18
20
0 0420 60
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
DRAIN TO SOURCE ON RESISTANCE(mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
3.0
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 61A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX