Datasheet

FDP3652 / FDB3652 — N-Channel PowerTrench
®
MOSFET
©2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB3652 FD
B3652
D
2
-PAK 330 mm 24 mm
800 units
FDP3652 FDP3652
TO-220
Tube N/A 50 units
Electrical Characteristics T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25°C, L = 0.228mH, I
AS
= 40A.
2: Pulse Width = 100s
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 100 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80V - - 1
µA
V
GS
= 0V -T
C
= 150
o
C -250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA2-4V
r
DS(ON)
Drain to Source On Resistance
I
D
= 61A, V
GS
= 10V - 0.014 0.016
Ω
I
D
= 30A, V
GS
= 6V - 0.018 0.026
I
D
= 61A, V
GS
= 10V,
T
J
= 175
o
C
- 0.035 0.043
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 2880 - pF
C
OSS
Output Capacitance - 390 - pF
C
RSS
Reverse Transfer Capacitance - 100 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 50V
I
D
= 61A
I
g
= 1.0mA
41 53 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 2V - 5 6.5 nC
Q
gs
Gate to Source Gate Charge - 15 - nC
Q
gs2
Gate Charge Threshold to Plateau - 10 - nC
Q
gd
Gate to Drain “Miller” Charge - 10 - nC
t
ON
Turn-On Time
V
DD
= 50V, I
D
= 61A
V
GS
= 10V, R
GS
= 6.8Ω
--146ns
t
d(ON)
Turn-On Delay Time - 12 - ns
t
r
Rise Time - 85 - ns
t
d(OFF)
Turn-Off Delay Time - 26 - ns
t
f
Fall Time - 45 - ns
t
OFF
Turn-Off Time - - 107 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 61A - - 1.25 V
I
SD
= 30A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 61A, dI
SD
/dt = 100A/µs- -62ns
Q
RR
Reverse Recovered Charge I
SD
= 61A, dI
SD
/dt = 100A/µs- -45nC