Datasheet

©2004 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C5
www.fairchildsemi.com
5
FDH3632 / FDP3632 / FDB3632 — N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
0.9
1.0
1.1
1.2
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
100
1000
10000
0.1 1 10 100
C, CAPACITANCE (pF)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
≅ C
DS
+ C
GD
C
RSS
= C
GD
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
0 02 406080100
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 80A
I
D
= 40A
WAVEFORMS IN
DESCENDING ORDER: