Datasheet

©2004 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C5
www.fairchildsemi.com
4
FDH3632 / FDP3632 / FDB3632 — N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
C
= 25°C unless otherwise noted
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
0.1
1
10
100
110100200
400
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10µs
10ms
1ms
DC
100µs
10
100
0.1 1 10
200
0.01
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
30
60
90
120
150
3.0 3.5 4.0 4.5 5.0 5.5 6.0
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
30
60
90
120
150
01223
I
D
, DRAIN CURRENT (A)
V
GS
= 5.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 6V
6
7
8
9
10
0 02 26 8040
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
DRAIN TO SOURCE ON RESISTANCE (m Ω)
V
GS
= 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
GS
= 10V, I
D
=80A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX