Datasheet

©2004 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C5
www.fairchildsemi.com
3
FDH3632 / FDP3632 / FDB3632 — N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0255075100 175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
100
125
25 50 75 100 125 150 175
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
CURRENT LIMITED
BY PACKAGE
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLEE - DESCE DING ORDER
SINGLE PULSE
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
50
2000
I
DM
, PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS: