Datasheet

FDH3632 / FDP3632 / FDB3632 — N-Channel PowerTrench
®
MOSFET
©2004 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C5
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25°C, L = 0.12mH, I
AS
= 75A, V
DD
= 80V.
2: Pulse Width = 100s
Device Marking Device Package Reel Size Tape Width Quantity
FDB3632 FDB3632
D
2
-PAK 330 mm 24 mm 800 units
FDP3632 FDP3632
TO-220
Tube N/A 50 units
FDH3632 FDH3632 TO-247
Tube N/A
30 units
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 100 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80V - - 1
µA
V
GS
= 0V T
C
= 150
o
C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA2-4V
r
DS(ON)
Drain to Source On Resistance
I
D
=80A, V
GS
=10V - 0.0075 0.009
ΩI
D
=40A, V
GS
= 6V, - 0.009 0.015
I
D
=80A, V
GS
=10V, T
C
=175
o
C - 0.018 0.022
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 6000 - pF
C
OSS
Output Capacitance - 820 - pF
C
RSS
Reverse Transfer Capacitance - 200 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 50V
I
D
= 80A
I
g
= 1.0mA
- 84 110 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 2V - 11 14 nC
Q
gs
Gate to Source Gate Charge - 30 - nC
Q
gs2
Gate Charge Threshold to Plateau - 20 - nC
Q
gd
Gate to Drain “Miller” Charge - 20 - nC
t
ON
Turn- On Time
V
DD
= 50V, I
D
= 80A
V
GS
= 10V, R
GS
= 3.6Ω
- - 102 ns
t
d(ON)
Turn-On Delay Time - 30 - ns
t
r
Rise Time - 39 - ns
t
d(OFF)
Turn-Off Delay Time - 96 - ns
t
f
Fall Time - 46 - ns
t
OFF
Turn-Off Time - - 213 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 80A - - 1.25 V
I
SD
= 40A - - 1.0 V
t
rr
Reverse Recovery Time -I
SD
= 75A, dI
SD
/dt= 100A/µs - 64 ns
Q
RR
Reverse Recovered Charge I
SD
= 75A, dI
SD
/dt= 100A/µs - - 120 nC