Datasheet

FDA8440 N-Channel Logic Level PowerTrench
®
MOSFET
©2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDA8440 Rev. C1
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25°C unless otherwise noted
NOTES:
1: Starting T
J
= 25°C, L = 1 mH, I
AS
= 58 A, V
DD
= 36 V, V
GS
= 10 V.
2: Pulse width = 100 s.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDA8440 FDA8440 TO-3PN Tube N/A N/A 30 units
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 μA40----V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32 V
V
GS
= 0 V
-- -- 1 μA
T
C
= 150
o
C-- --250μA
I
GSS
Gate to Body Leakage Current V
GS
= ±20 V -- -- ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
DS
= V
GS
, I
D
= 250 μA1--3V
R
DS(on)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 80 A -- 1.56 2.2
mΩ
V
GS
= 10 V, I
D
= 80 A -- 1.46 2.1
V
GS
= 10 V, I
D
= 80 A,
T
C
= 175
o
C
-- 2.82 4.1
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-- 18600 24740 pF
C
oss
Output Capacitance -- 1840 2450 pF
C
rss
Reverse Transfer Capacitance -- 1400 2100 pF
R
G
Gate Resistance V
GS
= 0.5 V, f = 1 MHz -- 1.1 -- Ω
Q
g(tot)
Total Gate Charge at 10V V
GS
= 0 V to 10 V
V
DD
= 20 V
I
D
= 80 A
I
g
= 1.0 mA
-- 345 450 nC
Q
g(2)
Threshold Gate Charge V
GS
= 0 V to 2 V -- 32.5 -- nC
Q
gs
Gate to Source Gate Charge -- 49 -- nC
Q
gs2
Gate Charge Threshold to Plateau -- 16.5 -- nC
Q
gd
Gate to Drain “Miller” Charge -- 74 -- nC
Switching Characteristics
t
ON
Turn-On Time
V
DD
= 20 V,I
D
= 80 A
V
GS
= 10 V, R
GEN
= 7 Ω
-- 175 360 ns
t
d(on)
Turn-On Delay Time -- 43 95 ns
t
r
Rise Time -- 130 275 ns
t
d(off)
Turn-Off Delay Time -- 435 875 ns
t
f
Fall Time -- 290 590 ns
t
OFF
Turn-Off Time -- 730 1470 ns
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
Source to Drain Diode Voltage
I
SD
= 80 A -- -- 1.25 V
I
SD
= 40 A -- -- 1.0 V
t
rr
Reverse Recovery Time I
SD
= 75 A, dI
SD
/dt = 100 A/μs--59--ns
Q
RR
Reverse Recovery Charge I
SD
= 75 A, dI
SD
/dt = 100 A/μs--77--nC