Datasheet

©2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. C3
www.fairchildsemi.com
4
FDA032N08 — N-Channel PowerTrench
®
MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs.
vs. Temperature
Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 10mA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 75A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150 175
0
50
100
150
200
250
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
Limited by package
0.1 1 10 100
0.1
1
10
100
1000
100μs
1ms
10ms
100ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
SINGLE PULSE
T
C
= 25
o
C
T
J
= 175
o
C
R
θJC
= 0.4
o
C/W
DC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.005
0.01
0.1
0.5
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 0.4
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Z
θ
JC
(t), Thermal Response [
o
C/W]
t
1
, Rectangular Pulse Duration [sec]