Datasheet

©2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. C3
www.fairchildsemi.com
3
FDA032N08 — N-Channel PowerTrench
®
MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.01 0.1 1
0.1
1
10
100
1000
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25
o
C
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
I
D
,Drain Current[A]
V
DS
,Drain-Source Voltage[V]
3000
2468
1
10
100
-55
o
C
175
o
C
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25
o
C
I
D
,Drain Current[A]
V
GS
,Gate-Source Voltage[V]
500
0.0 0.5 1.0 1.5
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
175
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
400
0 100 200 300 400
0.0020
0.0025
0.0030
*Note: T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0 50 100 150 200
0
2
4
6
8
10
*Note: I
D
= 75A
V
DS
= 15V
V
DS
= 37.5V
V
DS
= 60V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
0.1 1 10
100
1000
10000
100000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
80