Datasheet

©2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. C3
www.fairchildsemi.com
2
FDA032N08 — N-Channel PowerTrench
®
MOSFET
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDA032N08 FDA032N08 TO-3PN Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V, T
C
= 25
o
C75 - - V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25
o
C - 0.05 - V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 75 V, V
GS
= 0 V - - 1
μA
V
DS
= 75 V, T
C
= 150
o
C - - 500
I
GSS
Gate to Body Leakage Current V
GS
= ±20 V, V
DS
= 0 V - - ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 2.5 3.5 4.5 V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10 V, I
D
= 75 A - 2.5 3.2 mΩ
g
FS
Forward Transconductance V
DS
= 20 V, I
D
= 75 A - 180 - S
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
- 11400 15160 pF
C
oss
Output Capacitance - 1360 1810 pF
C
rss
Reverse Transfer Capacitance - 595 800 pF
Q
g(tot)
Total Gate Charge at 10V
V
DS
= 60 V, I
D
= 75 A,
V
GS
= 10 V
(Note 4)
- 169 220 nC
Q
gs
Gate to Source Gate Charge - 60 - nC
Q
gd
Gate to Drain “Miller” Charge - 47 - nC
t
d(on)
Turn-On Delay Time
V
DD
= 37.5 V, I
D
= 75 A,
R
G
= 25 Ω, V
GS
= 10 V
(Note 4)
- 230 470 ns
t
r
Turn-On Rise Time - 191 392 ns
t
d(off)
Turn-Off Delay Time - 335 680 ns
t
f
Turn-Off Fall Time - 121 252 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 235 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 940 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0 V, I
SD
= 75 A - - 1.3 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 75 A,
dI
F
/dt = 100 A/μs
-53-ns
Q
rr
Reverse Recovery Charge - 77 - nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.71 mH, I
AS
= 75 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 75 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.