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D45H11 — PNP Power Amplifier

D45H11 Rev. 1.2.0 1

December 2013

D45H11

PNP Power Amplifier

Features

• Sourced from process 5Q

• General-Purpose Switching Transistor

• Low Corrector-Emitter Saturation Voltage

• High-Fast Switching Speed

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Marking Package Packing Method

D45H11 D45H11 TO-220 3L Rail

Symbol Parameter Value Unit

CEO

Collector-Emitter Voltage -80 V

Collector Current - Continuous -10 A

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TO-220

1. Base 2. Collector 3. Emitter

Mark: D45H11

Description

This device is designed for power amplifier, regulator,

and switching circuits where speed is important.

Summary of content (6 pages)

PAGE 1
D45H11 PNP Power Amplifier Features Description • • • • This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from process 5Q General-Purpose Switching Transistor Low Corrector-Emitter Saturation Voltage High-Fast Switching Speed 1 TO-220 Mark: D45H11 1. Base 2. Collector 3.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD Max. Unit Total Device Dissipation Parameter 60 W Derate Above 25°C 480 mW/°C RθJC Thermal Resistance, Junction to Case 2.1 °C/W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W Note: 1. Device mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm: mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max.
PAGE 3
D45H11 — PNP Power Amplifier 200 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Performance Characteristics Vce = 5V 180 140 120 125 ºC 0.6 25 °C 80 60 0.2 - 40 °C 40 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A) 5 10 VBESAT- BASE-EMITTER VOLTAGE (V) β = 10 1.4 1.2 1 - 40 ºC 0.8 25 °C 125 ºC 0.6 0.4 0.1 1 I C - COLLECTOR CURRENT (A) - 40 ºC 0 0.1 10 1.6 10 15 β = 10 1.4 1.2 1 - 40 ºC 0.8 25 °C 125 ºC 0.6 0.4 0.1 Figure 3.
PAGE 4
D45H11 — PNP Power Amplifier Typical Performance Characteristics (Continued) Figure 8. Maximum Power Dissipation vs. Ambient Temperature Figure 7. Maximum Power Dissipation vs. Case Temperature Figure 9. Thermal Response © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.2.0 www.fairchildsemi.
PAGE 5
D45H11 — PNP Power Amplifier Physical Dimensions TO-220 Figure 10. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.