Datasheet

D45C8 — PNP Power Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
D45C8 Rev. B2 1
January 2010
D45C8
PNP Power Amplifier
• Sourced from process 5P.
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Electrical Characteristics T
A
=25°C unless otherwise noted
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -60 V
I
C
Collector Current - Continuous -4.0 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= -100mA, I
B
= 0 -60 V
I
CES
Collector-Emitter-(Base)Short V
CE
= -70V, I
E
= 0 -10 μA
I
CEO
Collector-Emitter-(Base)Open V
CE
= -55V, I
E
= 0 -100 μA
I
EBO
Emitter-Base Current V
EB
= -5.0V, I
B
= 0 -100 μA
On Characteristics
h
FE
DC Current Gain
V
CE
= -1.0V, I
C
= -0.2A
V
CE
= -1.0V, I
C
= -2.0A
40
20
120
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
= -1.0A, I
B
= -50mA -0.5 V
V
BE (sat)
Base-Emitter Saturation Voltage I
C
= -1.0A, I
B
= -100mA -1.3 V
Small Signal Characteristics
C
ob
Output Capacitance V
CB
= -10V, f = 1.0MHz 125 pF
f
T
Current Gain Bandwidth Product I
C
= -20mA, V
CE
= -4.0V 32 MHz
t
ON
t
d
, Delay Time
t
r
, Rise Time
I
C
= -1.0A,
I
B1
= I
B2
= -0.1A
V
CC
= -30V, tp = 25μs
59
502
ns
t
OFF
t
s
, Storage Time
t
f
, Fall Time
474
59
ns
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25
°C
60
480
W
mW/°C
R
θJC
Thermal Resistance, Junction to Case 2.1 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 62.5 °C/W
1
TO-220
1. Base 2. Collector 3. Emitter