Datasheet

©2000 Fairchild Semiconductor International Rev. A, February 2000
BD675A/677A/679A/681
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 4 A
I
CP
*Collector Current (Pulse) 6 A
I
B
Base Current 100 mA
P
C
Collector Dissipation (T
C
=25°C) 40 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) *Collector-Emitter Sustaining Voltage
: BD675A
: BD677A
: BD679A
: BD681
I
C
= 50mA, I
B
= 0 45
60
80
100
V
V
V
V
I
CBO
Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, V
BE
= 0
200
200
200
200
µA
µA
µA
µA
I
CEO
Collector Cut-off Current : BD675A
: BD677A
: BD679A
: BD681
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
500
500
500
500
µA
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 2 mA
h
FE
* DC Current Gain : BD675A/677A/679A
: BD681
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
750
750
V
CE
(sat) * Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD681
I
C
= 2A, I
B
= 40mA
I
C
= 1.5A, I
B
= 30mA
2.8
2.5
V
V
V
BE
(on) * Base-Emitter ON Voltage : BD675A/677A/679A
: BD681
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
2.5
2.5
V
V
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
1
TO-126
1. Emitter 2.Collector 3.Base