Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD434/436/438
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
V
CES
Collector-Emitter Voltage
: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
V
CEO
Collector-Emitter Voltage
: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 4 A
I
CP
*Collector Current (Pulse) - 7 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
=25°C) 36 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
1
TO-126
1. Emitter 2.Collector 3.Base