Datasheet

©2002 Fairchild Semiconductor Corporation Rev. B1, October 2002
BD176/178/180
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
h
FE
Classificntion
* Classification 16: Only BD 176
Symbol Parameter Value Units
V
CBO
*Collector-Base Voltage : BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
V
CEO
Collector-Emitter Voltage : BD176
: BD178
: BD180
- 45
- 60
- 80
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 3 A
I
C
*Collector Current (Pulse) - 7 A
P
C
Collector Dissipation (T
C
=25°C) 30 W
R
θja
Junction to Ambient
70 °C/W
R
θjc
Junction to Case
8.5 °C/W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD176
: BD178
: BD180
I
C
= - 100mA, I
B
= 0 - 45
- 60
- 80
V
V
V
I
CBO
Collector Cut-off Current : BD176
: BD178
: BD180
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
- 100
- 100
- 100
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1 mA
h
FE1
h
FE2
* DC Current Gain V
CE
= - 2V, I
C
= - 150mA
V
CE
= - 2V, I
C
= - 1A
40
15
250
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= -1 A , I
B
= - 0.1A - 0.8 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= - 2V, I
C
= -1 A - 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= - 250mA 3 MHz
Classification 6 10 16
h
FE1
40 ~ 100 63 ~ 160 100 ~ 250
BD176/178/180
Medium Power Linear and Switching
Applications
• Complement to BD 175/177/179 respectively
1
TO-126
1. Emitter 2.Collector 3.Base