Datasheet

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD157/158/159
NPN Epitxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD157
: BD158
: BD159
275
325
375
V
V
V
V
CEO
Collector-Emitter Voltage : BD157
: BD158
: BD159
250
300
350
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 0.5 A
I
CP
*Collector Current (Pulse) 1.0 A
I
B
Base Current 0.25 A
P
C
Collector Dissipation (T
C
=25°C) 20 W
T
J
Junction Temperature 50 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
*Collector-Emitter Breakdown Voltage
: BD157
: BD158
: BD159
I
C
= 1mA, I
B
= 0 250
300
350
V
V
V
I
CBO
Collector Cut-off Current
: BD157
: BD158
: BD159
V
CB
= 275V, I
E
= 0
V
CB
= 325V, I
E
= 0
V
CB
= 375V, I
E
= 0
100
100
100
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 100 µA
h
FE
* DC Current Gain V
CE
= 10V, I
C
= 50mA 30 240
BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
1
TO-126
1. Emitter 2.Collector 3.Base