Datasheet

©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
BCW89
Absolute Maximum Ratings * T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -60 V
V
CES
Collector-Emitter Voltage -60 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector current - Continuous -500 mA
T
J
, T
stg
Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -10µA, I
E
= 0 -80 V
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= -2.0mA, I
B
= 0 -60 V
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= -10µA, I
E
= 0 -60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
C
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cutoff Current V
CB
= -20V, I
E
= 0
V
CB
= -20V, I
E
= 0, T
A
= +100°C
-100
-10
nA
µA
On Characteristics
h
FE
DC Current Gain V
CE
= -5.0V, I
C
= -2.0mA 120 260
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA -0.3 V
V
BE(on)
Base-Emitter On Voltage V
CE
= -5.0V, I
C
= -2.0mA -0.6 -0.75 V
Small Signal Characteristics
NF Noise Figure V
CE
= -5.0V, I
C
= -200µA
R
S
= 2.0kΩ, f = 1.0kHz
B
W
= 200Hz
10 dB
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
BCW89
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
• Sourced from process 68.
1. Base 2. Emitter 3. Collector
1
2
3
SOT-23
Mark: H3