Datasheet

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1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

BCW71

Symbol Characteristic Max Units

*BCW71

Total Device Dissipation

Derate above 25

350

2.8

mW/

Thermal Resistance, Junction to Ambient 357

C/W

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 45 V

CES

Collector-Base Voltage 50 V

EBO

Emitter-Base Voltage 5.0 V

Collector Current - Continuous 500 mA

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

SOT-23

Mark: K1

This device is designed for general purpose amplifier

applications at collector currents to 300 mA. Sourced from

Process 10.

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

BCW71

Summary of content (4 pages)

PAGE 1
BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 45 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IE = 0 50 V IE = 10 µA, IC = 0 5.0 ICBO Collector-Cutoff Current VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 100°C V 100 10 µA ON CHARACTERISTICS hFE DC Current Gain IC = 2.
PAGE 3
(continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 β = 10 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 VBEON - BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 0.6 25 °C 125 °C 0.4 V CE = 5V 0.2 1 f = 1.0 MHz VCB = 60V 1 0.1 25 50 75 100 125 TA - AMBIE NT TEMPERATURE ( ° C) 3 10 Cib Cob 1 0.1 0.
PAGE 4
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