Datasheet

BCW68G — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCW68G Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6. Input and Output Capacitance vs.
Reverse Bias Voltage
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
110100500
0
0. 1
0. 2
0. 3
0. 4
0. 5
I - COLLECTOR CURRE NT (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
β
= 10
25 °C
- 40
°
C
125
°
C
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40
°
C
125
°
C
β
= 10
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40
°
C
125
°
C
25 50 75 100 125
0.01
0.1
1
10
10 0
T - A MBI E NT T EMP ER AT UR E ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 35V
CB
0.1 1 10 50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
C
ob
C
ib