Datasheet

BCW68G — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCW68G Rev. 1.1.0 2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Max. Unit
P
D
Total Device Dissipation 350 mW
Derate Above T
A
= 25°C 2.8 mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0 -45 V
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= -10 μA-60V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -100 μA, I
E
= 0 -60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= -10 μA, I
C
= 0 -5.0 V
I
CES
Collector Cut-Off Current
V
CE
= -45 V -20 nA
V
CE
= -45V, T
A
= 150°C -10 μA
I
EBO
Emitter Cut-Off Current V
EB
= -4.0 V -20 nA
h
FE
DC Current Gain
I
C
= -10 mA, V
CE
= -1.0 V 120
I
C
= -100 mA, V
CE
= -1.0 V 160 400
I
C
= -300 mA, V
CE
= -1.0 V 60
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -300 mA, I
B
= -30 mA -1.5 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -500 mA, I
B
= -50 mA -2.0 V
f
T
Current Gain - Bandwidth Product
I
C
= -20 mA, V
CE
= -10 V,
f = 100 MHz
100 MHz
C
ob
Output Capacitance
V
CB
= -10 V, I
E
= 0,
f = 1.0 MHz
18 pF
C
ib
Input Capacitance
V
EB
= -0.5 V, I
C
= 0,
f = 1.0 MHz
105 pF
NF Noise Figure
I
C
= -0.2 mA, V
CE
= -5.0 V,
R
S
= 1.0 kΩ, f = 1.0 kHz,
B
W
= 200 Hz
10 dB