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BCW68G — PNP General-Purpose Amplifier

BCW68G Rev. 1.1.0 1

March 2014

BCW68G

PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings

(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number Marking Package Packing Method

BCW68G DG SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

CEO

Collector-Emitter Voltage -45 V

CBO

Collector-Base Voltage -60 V

EBO

Emitter-Base Voltage -5 V

Collector Current - Continuous -800 mA

J ,

STG

Junction and Storage Temperature Range -55 to +150 °C

SOT-23

Mark: DG

Description

This device is designed for general-purpose amplifier

and switching applications at currents to 500 mA.

Sourced from process 63.

Summary of content (7 pages)

PAGE 1
BCW68G PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. E SOT-23 Mark: DG B Ordering Information Part Number Marking Package Packing Method BCW68G DG SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above TA = 25°C 2.8 mW/°C Thermal Resistance, Junction to Ambient 357 °C/W Note: 3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol V(BR)CEO Parameter Conditions Min. Max.
PAGE 3
VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 500 0.5 VCE = 5V 400 300 200 100 0 0.1 0.3 25 °C 0.1 - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) - 40 °C - 40 °C 0 1 25 °C 0.6 10 100 I C - COLLECTOR CURRE NT (mA) - 40 °C 0.6 125 °C 25 °C 0.4 β = 10 125 °C VCE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0.
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250 I B1 = I B2 = 200 500 Ic I B1 = I B2 = 10 400 V cc = 15 V ts 150 TIME (nS) TIME (nS) V cc = 15 V 100 tr 300 200 tf t off 100 50 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 8. Turn-On and Turn-Off Times vs. Collector Current Figure 7. Switching Times vs.
PAGE 5
CHAR. RELATIVE TO VALUES AT VCE = -10V CHAR. RELATIVE TO VALUES AT I C= -10mA 5 h oe h re 2 h fe 1 h ie 0.5 VCE = -10 V T A = 25 oC 0.2 0.1_ _ 1 _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 1.2 h re and hoe h re h ie h fe hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) -20 Figure 12. Common Emitter Characteristics Figure 11. Common Emitter Characteristics CHAR. RELATIVE TO VALUES AT TA = 25oC 1.3 1.5 I C = -10mA 1.4 V = -10 V CE 1.
PAGE 6
BCW68G — PNP General-Purpose Amplifier Physical Dimensions SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS.
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