Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BCW66G
Absolute Maximum Ratings * T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 75 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current - Continuous 1 A
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= 10µA75V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA 45 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10µA5V
I
CES
Collector Cut-off Current V
CB
= 45V, I
E
= 0
V
CB
= 45V, I
E
= 0
T
A
= 150°C
20 nA
20 µA
I
EBO
Emitter Cut-off Current V
EB
= 4V 20 nA
h
FE
DC Current Gain V
CE
= 10V, I
C
= 100µA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
50
110
160
60
400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
0.3
0.7
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 2 V
C
obo
Output Capacitance V
CB
= 10V, f = 1MHz 12 pF
C
ibo
Input Capacitance V
EB
= 0.5V, f = 1MHz 80 pF
f
T
Current gain Bandwidth Product V
CE
= 10V, I
C
= 20mA,
f = 100MHz
100 MHz
NF Noise Figure V
CE
= 5V, I
C
= 0.2mA, R
S
= 1kΩ,
f = 1KHz, BW = 200Hz
10 dB
t
on
Turn-On Time I
B1
= I
B2
= 15mA
I
C
= 150mA, R
L
= 150Ω
100 ns
t
off
Turn-Off Time 400
BCW66G
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 500mA.
• Sourced from process 13.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: EG