Datasheet

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BC856- BC860 Rev. B
BC856- BC860 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
I
B
= - 50µA
I
B
= - 100µA
I
B
= - 150µA
I
B
= - 200µA
I
B
= - 250µA
I
B
= - 300µA
I
B
= - 350µA
I
B
= - 400µA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
10
100
1000
V
CE
= - 5V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
V
CE
= - 5V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz I
E
=0
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
f=1MHz I
E
=0
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT