Datasheet

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BC817/BC818 Rev. B
BC817/BC818 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter On Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
Figure 5. Power Dissipation vs Ambient Temperature
1 10 100 1000
0
100
200
300
400
500
600
125
o
C
25
o
C
-25
o
C
75
o
C
BC81725MTF
Vce=1V
hfe, Current Gain
Collector Current, [mA]
110100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
125
o
C
75
o
C
25
o
C
V
CE
= 1V
Vbe(on), Base-Emitter On Voltage,[V]
Collector Current, [mA]
10 100 1000
0.0
0.1
0.2
0.3
0.4
125
o
C
75
o
C
25
o
C
-25
o
C
Ic=10Ib
Vce(sat), Saturation Voltage,[V]
Collector Current, [mA]
10 100 1000
0.4
0.6
0.8
1.0
1.2
125
o
C
75
o
C
25
o
C
-25
o
C
Ic=10Ib
Vbe(sat), Saturation Voltage,[V]
Collector Current, [mA]
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
P
D
- Power Dissipation (W)
Temperature, [
O
C]