Datasheet

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC817/BC818 Rev. B
BC817/BC818 NPN Epitaxial Silicon Transistor
tm
November 2006
BC817/BC818
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/ BC808
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BC817
: BC818
50
30
V
V
V
CEO
Collector-Emitter Voltage
: BC817
: BC818
45
25
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 800 mA
P
C
Collector Power Dissipation 310 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC817
: BC818
I
C
=10mA, I
B
=0
45
25
V
V
BV
CES
Collector-Emitter Breakdown Voltage
: BC817
: BC818
I
C
=0.1mA, V
BE
=0
50
30
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=0.1mA, I
C
=0 5 V
I
CES
Collector Cut-off Current V
CE
=25V, V
BE
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 100 nA
h
FE1
h
FE2
DC Current Gain V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
100
60
630
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=500mA, I
B
=50mA 0.7 V
V
BE
(on) Base-Emitter On Voltage V
CE
=1V, I
C
=300mA 1.2 V
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA
f=50MHz
100 MHz
C
ob
Output Capacitance V
CB
=10V, f=1MHz 12 pF
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3