Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC807/BC808
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage
: BC807
: BC808
-50
-30
V
V
V
CEO
Collector-Emitter Voltage
: BC807
: BC808
-45
-25
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -800 mA
P
C
Collector Power Dissipation -310 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC807
: BC808
I
C
= -10mA, I
B
=0
-45
-25
V
V
BV
CES
Collector-Emitter Breakdown Voltage
: BC807
: BC808
I
C
= -0.1mA, V
BE
=0
-50
-30
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -0.1mA, I
C
=0 -5 V
I
CES
Collector Cut-off Current V
CE
= -25V, V
BE
=0 -100 nA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
=0 -100 nA
h
FE1
h
FE2
DC Current Gain V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -300mA
100
60
630
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -500mA, I
B
= -50mA -0.7 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -1V, I
C
= -300mA -1.2 V
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -10mA
f=50MHz
100 MHz
C
ob
Output Capacitance V
CB
= -10V, f=1MHz 12 pF
BC807/BC808
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3