Datasheet

BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
I
B
= -50μA
I
B
= -100μA
I
B
= -150μA
I
B
= -200μA
I
B
= -250μA
I
B
= -300μA
I
B
= -350μA
I
B
= -400μA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
V
CE
= -5V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
I
C
= -10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz
I
E
= 0
C
ob
(pF), CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
V
CE
= -5V
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT