Datasheet

2N7002K — N-Channel Enhancement Mode Field Effect Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002K Rev. A3 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-Source Voltage
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
0246810
0.0
0.5
1.0
1.5
2.0
2V
3V
4V
5V
V
GS
= 10V
I
D
. DRAIN-SOURCE CURRENT(A)
V
DS
. DRAIN-SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.5
1.0
1.5
2.0
2.5
3.0
(Ω)
9V
8V
5V
6V
10V
7V
4V
4.5V
V
GS
= 3V
R
DS
(on),
DRANI-SOURCE ON-RESISTANCE
I
D
. DRAIN-SOURCE CURRENT(A)
-50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
3.0
(Ω)
V
DS
= 10V
I
D
= 500 mA
R
DS
(on)
DRANI-SOURCE ON-RESISTANCE
T
J
. JUNCTION TEMPERATURE(
o
C)
23456
0.0
0.2
0.4
0.6
0.8
1.0
V
DS
= 10V
75(
o
C)
125(
o
C)
150(
o
C)
25(
o
C)
T
J
= -25(
o
C)
I
D
. DRAIN-SOURCE CURRENT(A)
V
GS
. GATE-SOURCE VOLTAGE (V)
-50 0 50 100 150
1.0
1.2
1.4
1.6
1.8
2.0
I
D
= 0.25 mA
I
D
= 1 mA
V
DS
= V
GS
Vth, Gate-Source Threshold Voltage (V)
T
J
. JUNCTION TEMPERATURE(
o
C)