Datasheet

2N7002K — N-Channel Enhancement Mode Field Effect Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002K Rev. A3 2
Electrical Characteristics T
A
= 25°C unless otherwise noted
Note1 : Short duration test pulse used to minimize self-heating effect.
Symbol Parameter Test Condition MIN MAX Units
Off Characteristics
(Note1)
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 10uA 60 V
I
DSS
Zero Gate Voltage Drain Current V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, @T
C
=125°C
1.0
500
μA
I
GSS
Gate-Body Leakage V
GS
= ±20V, V
DS
= 0V ±10 μA
On Characteristics (Note1)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA 1.0 2.5 V
R
DS(ON)
Satic Drain-Source On-Resistance V
GS
= 10V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 200mA
2
4
Ω
I
D(ON)
On-State Drain Current V
GS
= 10V, V
DS
= 7.5V 1.5 A
g
FS
Forward Transconductance V
DS
= 10V, I
D
= 0.2A 200 mS
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
50 pF
C
oss
Output Capacitance 15 pF
C
rss
Reverse Transfer Capacitance 6 pF
Switching Characteristics
t
D(ON)
Turn-On Delay Time
V
DD
= 30V, I
DSS
= 200mA,
R
G
= 10Ω, V
GS
= 10V
5
ns
t
D(OFF)
Turn-Off Delay Time 30