Datasheet

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002DW Rev. A 4
Typical Performance Characteristics
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
Figure 8. Power Derating
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
-55
o
C
V
GS
= 0 V
150
o
C
25
o
C
V
SD
, Body Diode Forward Voltage [V]
I
S
Reverse Drain Current, [mA]
0 25 50 75 100 125 150 175
0
40
80
120
160
200
240
280
P
C
[mW], POWER DISSIPATION
T
a
[
o
C], AMBIENT TEMPERATURE