Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETs2N7002DW, MOSFET

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor

2N7002DW Rev. A 1

October 2007

2N7002DW

N-Channel Enhancement Mode Field Effect Transistor

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size,

Symbol Parameter Value Units

DSS

Drain-Source Voltage 60 V

DGR

Drain-Gate Voltage R

≤ 1.0MΩ 60 V

GSS

Gate-Source Voltage Continuous

Pulsed

±20

±40

Drain Current Continuous

Continuous @ 100°C

Pulsed

115

800

J ,

STG

Junction and Storage Temperature Range -55 to +150 °C

Symbol Parameter Value Units

Total Device Dissipation

Derating above TA = 25°C

200

1.6

mW/°C

θJA

Thermal Resistance, Junction to Ambient * 625 °C/W

SC70-6 (SOT363)

Marking : 2N

Summary of content (6 pages)

PAGE 1
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant SC70-6 (SOT363) 1 1 Marking : 2N Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ≤ 1.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Condition MIN TYP MAX Units 60 78 - V Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=10uA IDSS Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V VDS= 60V, VGS= 0V, @TC = 125°C - 0.001 7 1.0 500 uA IGSS Gate-Body Leakage VGS= ±20V, VDS= 0V - 0.2 ±10 nA 1.0 1.76 2.0 V - 1.6 2.53 7.5 13.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 1.6 VGS = 10V 1.4 1.2 5V 1.0 4V 0.8 0.6 0.4 3V 0.2 VGS = 3V 4V 4.5V 5V 6V 2.5 2.0 10V 9V 1.5 8V 7V 2V 1.0 0.0 0.0 0 1 2 3 4 5 6 7 8 9 10 0.2 0.4 Figure 3.
PAGE 4
Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature Figure 8. Power Derating 280 o 150 C PC[mW], POWER DISSIPATION IS Reverse Drain Current, [mA] VGS = 0 V 100 o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 200 160 120 80 40 0 1.0 0 VSD, Body Diode Forward Voltage [V] 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A 240 www.fairchildsemi.
PAGE 5
2N7002DW — N-Channel Enhancement Mode Field Effect Transistor Package Dimensions SC70-6 ( SOT-363 ) © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A www.fairchildsemi.
PAGE 6
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