Datasheet

1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. A2 1
September 2009
1N4148WT / 1N4448WT / 1N914BWT
High Conductance Fast Switching Diode
Features
• Fast Switching Diode (Trr <4.0nsec)
• Flat Lead, Surface Mount Device Under 0.70mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Absolute Maximum Ratings* T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
RSM
Non-Repetitive Peak Reverse Voltage 75 V
V
RRM
Repetitive Peak Reverse Voltage 75 V
I
FRM
Repetitive Peak Forward Current 300 mA
T
J
Operating Junction Temperature Range -55 to +150 °C
T
STG
Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Units
P
D
Power Dissipation (T
C
=25°C) 200 mW
R
θJA
Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Conditions Min Typ Max Units
BV
R
Breakdown Voltage
I
R
= 100 μA
I
R
= 5 μA
100
75
V
I
R
Reverse Current
V
R
= 20 V
V
R
= 75 V
25
5
nA
μA
V
F
Forward Voltage
1N4448WT/ 914BWT
1N4148WT
1N4448WT/ 914BWT
I
F
= 5 mA
I
F
= 10 mA
I
F
= 100 mA
0.62 0.72
1
1
V
C
O
Diode Capacitance V
R
= 0, f = 1 MHz 4 pF
T
RR
Reverse Recovery Time
I
F
= 10 mA, V
R
= 6.0 V
I
RR
= 1 mA, R
L
= 100 Ω
4nS
SOD-523F
Band Indicates Cathode
Device Marking Code
Device Type Device Marking
1N4148WT E1
1N4448WT E2
1N914BWT E3
Cathode
ELECTRICAL SYMBOL
Anode