Operation Manual

THE INDUCTION HOB
Technical training
- 32 -
CU3-INDUCTION-003UK-10/05
IX3 WR
11.2. - Internal organization
11.3. - Details of the power circuit
The IX3WR power circuit strongly differs from the IX3.
• Integrated rectifier bridge.
• The front / rear distribution by relay is replaced by the inverter stage doubling. The result is: 2 x 2
recovery diodes, 2 x 2 capacitors, 2 X 2 Transistors
• A current transformer by inverter to ensure saucepan detection.
• Use of IGBT transistors. The IGBT (Insulated Gate Bipolar Transistor) is a bipolar transistor that
is voltage controlled. It associates the advantages of bipolar transistors (high voltages and
currents) and those of MOSFET transistors (high-speed switching, low control energy).
• A relay provides control of a 'triple crown' source.