Datasheet

LifecyclePhase:
Revision : 10
Expired Period: Forever
Release Date:2010-05-29 16:39:31.0
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 3 http://www.everlight.com
Document No
：DPC-0000046 Rev.10 April, 21 2010
EL817 Series
Electrical Characteristics (T
a
=25°C unless specified otherwise)
Input
Parameter Symbol Min. Typ.* Max. Unit Condition
Forward voltage
V
F
- 1.2 1.4 V
I
F
= 20mA
Reverse current
I
R
- - 10 µA
V
R
= 4V
Input capacitance
C
in
- 30 250 pF V = 0, f = 1kHz
Output
Parameter Symbol Min. Typ.* Max. Unit Condition
Collector-Emitter dark
current
I
CEO
- - 100 nA
V
CE
= 20V, I
F
= 0mA
Collector-Emitter
breakdown voltage
BV
CEO
35 - -
V
I
C
= 0.1mA
Emitter-Collector
breakdown voltage
BV
ECO
6 - - V
I
E
= 0.1mA
Transfer Characteristics (T
a
=25°C unless specified otherwise)
Parameter Symbol Min. Typ.* Max. Unit Condition
EL817 50 - 600
EL817A 80 - 160
EL817B 130 - 260
EL817C 200 - 400
EL817D 300 - 600
EL817X 100 - 200
Current Transfer
ratio
EL817Y
CTR
150 - 300
%
I
F
= 5mA ,V
CE
= 5V
Collector-Emitter
saturation voltage
V
CE(sat)
- 0.1 0.2
V
I
F
= 20mA ,I
C
= 1mA
Isolation resistance
R
IO
5×10
10
- -

V
IO
= 500Vdc,
40~60% R.H.
Floating capacitance
C
IO
- 0.6 1.0 pF
V
IO
= 0, f = 1MHz
Cut-off frequency fc - 80 -
kHz
V
CE
= 5V, I
C
= 2mA
R
L
= 100, -3dB
Rise time
t
r
- 4 18
µs
Fall time
t
f
- 3 18
µ
s
V
CE
= 2V, I
C
= 2mA,
R
L
=
100

* Typical values at T
a
= 25°C