Data Sheet

4 Electrical Characteristics
Symbol Parameter Min Typ Max Unit
I
OH
High-level source current
(VDD
1
= 3.3 V,
V
OH
>= 2.64 V,
output drive strength set
to the maximum)
VDD3P3_CPU
power domain
1, 2
- 40 - mA
VDD3P3_RTC
power domain
1, 2
- 40 - mA
VDD_SDIO power
domain
1, 3
- 20 - mA
I
OL
Low-level sink current
(VDD
1
= 3.3 V, V
OL
= 0.495 V,
output drive strength set to the maximum)
- 28 - mA
R
P U
Resistance of internal pull-up resistor - 45 - kΩ
R
P D
Resistance of internal pull-down resistor - 45 - kΩ
V
IL_nRST
Low-level input voltage of CHIP_PU
to power off the chip
- - 0.6 V
Note:
1. Please see Appendix IO_MUX of ESP32 Datasheet for IO’s power domain. VDD is the I/O voltage for a particular
power domain of pins.
2. For VDD3P3_CPU and VDD3P3_RTC power domain, per-pin current sourced in the same domain is gradually
reduced from around 40 mA to around 29 mA, V
OH
>=2.64 V, as the number of current-source pins increases.
3. Pins occupied by flash and/or PSRAM in the VDD_SDIO power domain were excluded from the test.
4.4 Current Consumption Characteristics
With the use of advanced power-management technologies, ESP32 can switch between different power
modes.
For details on ESP32’s power consumption in different power modes, please refer to section ”RTC and
Low-Power Management” in ESP32 Datasheet.
4.4.1 Current Consumption Depending on RF Modes
Table 7: Current Consumption Depending on RF Modes
Work mode Description Average (mA) Peak (mA)
Active (RF working)
TX
802.11b, 20 MHz, 1 Mbps, @19.5 dBm 239 379
802.11g, 20 MHz, 54 Mbps, @15 dBm 190 276
802.11n, 20 MHz, MCS7, @13 dBm 183 258
802.11n, 40 MHz, MCS7, @13 dBm 165 211
RX
802.11b/g/n 112 112
802.11n, 40 MHz 118 118
Espressif Systems 15
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ESP32-WROOM-32E & ESP32-WROOM-32UE Datasheet v1.2